AN ANALYTICAL MODEL OF SUBSTRATE CURRENT IN A SHORT CHANNEL MOSFET

Authors

  • Md. Maniruzzaman Electronics and Communication Engineering Discipline, Khulna University, Khulna 9208, Bangladesh
  • Md. Shamsur Rahman Chowdhury Electronics and Communication Engineering Discipline, Khulna University, Khulna 9208, Bangladesh
  • Mohammad Ashraf Ali Khan Electronics and Communication Engineering Discipline, Khulna University, Khulna 9208, Bangladesh
  • Md. Shamim Ahsan Electronics and Communication Engineering Discipline, Khulna University, Khulna 9208, Bangladesh

DOI:

https://doi.org/10.53808/KUS.2007.8.1.0629-E

Keywords:

Physical model, substrate current model, short channel, MOSFET, multiplication factor

Abstract

The drain characteristics of a short channel MOSFET operating in the avalanche multiplication regime depends strongly on the flow of substrate current . In this work, the detailed physics and the corresponding mathematical analysis of the substrate current model of a short channel MOSFET in its avalanche multiplication regime has been presented, which can be used to find the different characteristics of the short channel MOSFET for a wide range of device parameters. It is shown that by using a multiplication model, the substrate current can be obtained for a particular drain source voltage . The model system shows excellent results, which were confirmed by the computer-aided simulation program (MATLAB).

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References

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Published

26-05-2007

How to Cite

[1]
M. . Maniruzzaman, M. S. R. . Chowdhury, M. A. A. . Khan, and M. S. . Ahsan, “AN ANALYTICAL MODEL OF SUBSTRATE CURRENT IN A SHORT CHANNEL MOSFET”, Khulna Univ. Stud., pp. 21–28, May 2007.

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Section

Science and Engineering

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