EFFECTS OF GATE OXIDE SHORTS IN CMOS INVERTER CIRCUIT
DOI:
https://doi.org/10.53808/KUS.2000.2.2.0102-seKeywords:
Gate oxide shorts; Inverter; Breakdown voltage; Realistic modelAbstract
Gate oxide shorts of MOS transistors play a key role to cause logic errors as well as to show unusual behaviour in CMOS logic gate operation. Although it is unintended electrical connections, but it acts as a dominant defect in some CMOS fabrication processes. By using a realistic model, logic operation of the inverter circuit has been evaluated by changing the resistance of the short, power supply and operating temperature. A dynamic circuit simulator (SPICE) provides the necessary data to verify the analysis considering oxide shorts for n- and p-channel transistors.
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